FDMS86102LZ Datasheet, MOSFET, Fairchild Semiconductor

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FDMS86102LZ Features and benefits

General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A
* Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A
* H.

FDMS86102LZ Application

* DC - DC Conversion
* Inverter
* Synchronous Rectifier Top Bottom Pin 1 S S D S S G S D Power.

FDMS86102LZ Description

* Shielded Gate MOSFET Technology
* Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A
* Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A
* HBM ESD protection level > 6 KV typical (Note 4)
* 100% UIL Tested
* RoHS Compliant This N-Ch.

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